Diodes Incorporated DMG6301UDW-13 MOSFETs
MOSFET 2N-CH 25V 0.24A SOT363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMG6301UDW-13
Base Model
Detailed Description
MOSFET 2N-CH 25V 0.24A SOT363
Package
TSSOP-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMG6301UDW-13 MOSFETs technical specifications.
General
Series
DMG6301
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
25 V
ID Continuous Drain Current
240 mA
Rds on Drain Source Resistance
3.8 Ohms
Related Parts Comparison (DMG6301UDW-13 vs DMG6301UDW-7 vs DMG1016UDW-7 vs DMP1055USW-7)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | TSSOP-6 | Tape & Reel (TR) | TSSOP-6 | TSSOP-6 |
| Series | DMG6301 | DMG6301 | DMG1016 | -- |
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | -- |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Configuration | Dual | 2 N-Channel (Dual) | Dual | -- |
| Fall Time | 2.3 ns | 2.3 ns | 12.3 ns, 20.72 ns | -- |
| Pd Power Dissipation | 370 mW | 370 mW | 330 mW | -- |
| Qg Gate Charge | 360 pC | 360 pC | 736.6 nC, 622.4 pC | -- |
| Rds on Drain Source Resistance | 3.8 Ohms | 3.8 Ohms | 450 mOhms, 750 mOhms | -- |
| Rise Time | 1.8 ns | 1.8 ns | 7.4 ns, 8.1 ns | -- |
| Action |
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