Diodes Incorporated DMC2004DWK-7 MOSFETs
MOSFET N/P-CH 20V SOT363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMC2004DWK-7
Detailed Description
MOSFET N/P-CH 20V SOT363
Package
TSSOP-6
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMC2004DWK-7 MOSFETs technical specifications.
General
Series
DMC2004
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
540 mA, 430 mA
Rds on Drain Source Resistance
550 mOhms, 900 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (DMC2004DWK-7 vs DMP1055USW-7 vs DMN65D8LDWQ-7 vs BSS84DWQ-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSSOP-6 | TSSOP-6 | TSSOP-6 | TSSOP-6 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Number of Channels | 2 Channel | -- | -- | 2 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| ID Continuous Drain Current | 540 mA, 430 mA | -- | -- | 130 mA |
| Pd Power Dissipation | 250 mW | -- | -- | 300 mW |
| Rds on Drain Source Resistance | 550 mOhms, 900 mOhms | -- | -- | 10 Ohms |
| Technology | Si | -- | -- | Si |
| Transistor Polarity | N-Channel, P-Channel | -- | -- | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | -- | -- | 50 V |
| Vgs Gate Source Voltage | - 8 V, + 8 V | -- | -- | - 20 V, + 20 V |
| Action |
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