Diodes Incorporated BSS138DWQ-7 MOSFETs
MOSFET 2N-CH 50V 0.2A SOT363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSS138DWQ-7
Base Model
Detailed Description
MOSFET 2N-CH 50V 0.2A SOT363
Package
SOT-363
Lifecycle Status
Active
Datasheet
BSS138DWQ-7 Datasheet
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Technical Specifications
Diodes Incorporated BSS138DWQ-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
50 V
ID Continuous Drain Current
200 mA
Rds on Drain Source Resistance
3.5 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
500 mV
Alternate Parts Comparison (BSS138DWQ-7 vs BSS138DWQ-13 vs BSS84DWQ-13 vs BSS84DW-7-F)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSSOP-6 | TSSOP-6 | TSSOP-6 | TSSOP-6 |
| Technology | Si | Si | Si | Si |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | -- | 2 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Dual | Dual | -- | Dual |
| ID Continuous Drain Current | 200 mA | 200 mA | -- | 130 mA |
| Pd Power Dissipation | 200 mW | 200 mW | -- | 300 mW |
| Rds on Drain Source Resistance | 3.5 Ohms | 3.5 Ohms | -- | 10 Ohms |
| Transistor Polarity | N-Channel | N-Channel | -- | P-Channel |
| Unit Weight | 0.000265 oz | 0.000265 oz | -- | 0.000265 oz |
| Action |
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