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Diodes Incorporated BSS8402DW-7-F MOSFETs

MOSFET N/P-CH 60V/50V SOT363

19,710 ActiveDiodes IncorporatedBSS8402DWTSSOP-6$0.21RoHS
BSS8402DW-7-F TSSOP-6 package illustration

Same model may have multiple batches, images only for reference.

BSS8402DW-7-F
Part Number (MPN)
BSS8402DW-7-F
Base Model
Detailed Description
MOSFET N/P-CH 60V/50V SOT363
Package
TSSOP-6
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
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Ordering Code Family

BSS8402DW groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated BSS8402DW-7-F MOSFETs technical specifications.

General

Series
BSS84
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
60 V, 50 V
ID Continuous Drain Current
115 mA, 130 mA
Rds on Drain Source Resistance
7.5 Ohms, 10 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (BSS8402DW-7-F vs BSS8402DW-13-F vs BSS84DWQ-7 vs BSS138DWQ-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes
PackageTSSOP-6SOT-363-6TSSOP-6TSSOP-6
Mounting TypeSMD/SMT--SMD/SMTSMD/SMT
Number of Channels2 Channel--2 Channel2 Channel
Channel ModeEnhancement--EnhancementEnhancement
ID Continuous Drain Current115 mA, 130 mA--130 mA200 mA
Pd Power Dissipation200 mW--300 mW200 mW
Rds on Drain Source Resistance7.5 Ohms, 10 Ohms--10 Ohms3.5 Ohms
TechnologySi--SiSi
Transistor PolarityN-Channel, P-Channel--P-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V, 50 V--50 V50 V
Vgs Gate Source Voltage- 20 V, + 20 V--- 20 V, + 20 V- 20 V, + 20 V
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