Diodes Incorporated BSS84DWQ-7 MOSFETs
MOSFET 2P-CH 50V 0.13A SOT363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSS84DWQ-7
Base Model
Detailed Description
MOSFET 2P-CH 50V 0.13A SOT363
Package
TSSOP-6
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated BSS84DWQ-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
50 V
ID Continuous Drain Current
130 mA
Rds on Drain Source Resistance
10 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (BSS84DWQ-7 vs BSS84DWQ-13 vs BSS8402DW-7-F vs BSS138DWQ-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSSOP-6 | TSSOP-6 | TSSOP-6 | TSSOP-6 |
| Technology | Si | Si | Si | Si |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | -- | 2 Channel | 2 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| ID Continuous Drain Current | 130 mA | -- | 115 mA, 130 mA | 200 mA |
| Pd Power Dissipation | 300 mW | -- | 200 mW | 200 mW |
| Rds on Drain Source Resistance | 10 Ohms | -- | 7.5 Ohms, 10 Ohms | 3.5 Ohms |
| Transistor Polarity | P-Channel | -- | N-Channel, P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 50 V | -- | 60 V, 50 V | 50 V |
| Vgs Gate Source Voltage | - 20 V, + 20 V | -- | - 20 V, + 20 V | - 20 V, + 20 V |
| Action |
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