Diodes Incorporated DMN3190LDW-7 MOSFETs
MOSFET 2N-CH 30V 1A SOT363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN3190LDW-7
Base Model
Detailed Description
MOSFET 2N-CH 30V 1A SOT363
Package
TSSOP-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN3190LDW-7 MOSFETs technical specifications.
General
Series
DMN3190
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
1 A
Rds on Drain Source Resistance
190 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (DMN3190LDW-7 vs DMN3190LDW-13 vs DMN65D8LDWQ-7 vs DMN2004DWK-7)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | TSSOP-6 | Tape & Reel (TR) | TSSOP-6 | TSSOP-6 |
| Series | DMN3190 | DMN31 | -- | DMN2004 |
| Mounting Type | SMD/SMT | Surface Mount | -- | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | -- | 2 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Dual | 2 N-Channel (Dual) | -- | Dual |
| Fall Time | 15.6 ns | 15.6 ns | -- | 10.5 ns |
| Maximum Operating Temperature C | + 150 | 150 | -- | + 150 |
| Minimum Operating Temperature C | - 55 | -55 | -- | - 65 |
| Pd Power Dissipation | 400 mW | 320 mW | -- | 200 mW |
| Qg Gate Charge | 2 nC | 2 nC | -- | 530 pC |
| Action |
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