Diodes Incorporated DMG1016UDW-7 MOSFETs
MOSFET N/P-CH 20V SOT363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMG1016UDW-7
Detailed Description
MOSFET N/P-CH 20V SOT363
Package
TSSOP-6
Lifecycle Status
Active
Datasheet
DMG1016UDW-7 Datasheet
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Technical Specifications
Diodes Incorporated DMG1016UDW-7 MOSFETs technical specifications.
General
Series
DMG1016
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
1.066 A, 845 mA
Rds on Drain Source Resistance
450 mOhms, 750 mOhms
Vgs Gate Source Voltage
- 6 V, + 6 V
Alternate Parts Comparison (DMG1016UDW-7 vs DMG6301UDW-13 vs DMP1055USW-7 vs DMN65D8LDWQ-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSSOP-6 | TSSOP-6 | TSSOP-6 | TSSOP-6 |
| Series | DMG1016 | DMG6301 | -- | -- |
| Mounting Type | SMD/SMT | SMD/SMT | -- | -- |
| Number of Channels | 2 Channel | 2 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Dual | Dual | -- | -- |
| Fall Time | 12.3 ns, 20.72 ns | 2.3 ns | -- | -- |
| ID Continuous Drain Current | 1.066 A, 845 mA | 240 mA | -- | -- |
| Pd Power Dissipation | 330 mW | 370 mW | -- | -- |
| Qg Gate Charge | 736.6 nC, 622.4 pC | 360 pC | -- | -- |
| Rds on Drain Source Resistance | 450 mOhms, 750 mOhms | 3.8 Ohms | -- | -- |
| Action |
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