Toshiba MT3S111P(TE12L,F) RF BJT
MT3S111P(TE12L,F) by Toshiba · RF BJT · SOT-89
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MT3S111P(TE12L,F)
Package
SOT-89
Lifecycle Status
Active
Datasheet
MT3S111P(TE12L,F) Datasheet
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Technical Specifications
Toshiba MT3S111P(TE12L,F) RF BJT technical specifications.
General
Series
MT3S111P
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
+ 150°C
Transistor Type
Bipolar
Technology
SiGe
Transistor Polarity
NPN
Operating Frequency
8 GHz
Dc Collector Base Gain Hfe Min
200
Collector Emitter Voltage Vceo Max
6 V
Related Parts Comparison (MT3S111P(TE12L,F) vs MT3S20TU(TE85L) vs MT3S20P(TE12L,F) vs MT3S111TU,LF)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | RoHS Compliant | ROHS3 Compliant |
| Mounting Type | SMD/SMT | -- | Surface Mount | Surface Mount |
| Operating Temperature | + 150°C | -- | 150°C (TJ) | 150°C (TJ) |
| Transistor Type | Bipolar | -- | NPN | NPN |
| Package | SOT-89 | UFM-3 | -- | -- |
| Series | MT3S111P | -- | -- | -- |
| Collector Emitter Voltage Vceo Max | 6 V | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Continuous Collector Current | 100 mA | -- | -- | -- |
| Dc Collector Base Gain Hfe Min | 200 | -- | -- | -- |
| Emitter Base Voltage Vebo | 600 mV | -- | -- | -- |
| Maximum Dc Collector Current | 100 mA | -- | -- | -- |
| Action |
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