Samsung Semiconductor K4T51163QQ-BCE7 DRAM
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V [FBGA | Obsolete/discontinued; stocked for maintenance and LTB | RoHS Compliant].
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T51163QQ-BCE7
Detailed Description
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V
Package
FBGA
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
K4T51163QQ-BCE7 Datasheet
Quick Jump:
Technical Specifications
Samsung Semiconductor K4T51163QQ-BCE7 DRAM technical specifications.
General
RoHS
Yes
Operating Temperature
0°C ~ 85°C
Supply Voltage
1.7V ~ 1.95V
Estimated Eol Date
Obsolete
Family
Memory
Family Name
K4T51163QQ
Introduction Date
February 25, 2014
Density
512M
Memory Organization
32M x 16
Speed
400MHz
Alternate Parts Comparison (K4T51163QQ-BCE7 vs K4B2G0846D-HCH9 vs K4M561633G-BN75 vs K4B2G1646Q-BCMA)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | BGA | BGA | FBGA-54 | FBGA |
| Operating Temperature | 0°C ~ 85°C | 0 ~ 95 | -25 ~ 85 | -- |
| Supply Voltage | 1.7V ~ 1.95V | 1.425 ~ 1.575 | 3 | -- |
| Memory Organization | 32M x 16 | 256Mx8 | 16MX16 | -- |
| Action |
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