Samsung Semiconductor K4T1G164QQ-HCE6000 DRAM
DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA Tray
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T1G164QQ-HCE6000
Detailed Description
DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin FBGA Tray
Package
FBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4T1G164QQ-HCE6000 Datasheet
Quick Jump:
Technical Specifications
Samsung Semiconductor K4T1G164QQ-HCE6000 DRAM technical specifications.
General
RoHS
Compliant
Package / Case
FBGA
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 95°C
Supply Voltage
1.8V
Access Time Max
450ps
Address Bus Width
16b
Density
1Gb
Max Frequency
667MHz
Organization
64MX16
Alternate Parts Comparison (K4T1G164QQ-HCE6000 vs K4M51163PE-BG75 vs K4AAG165WA-BCTD vs K4A4G085WE-BCRC)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Compliant | Compliant | Compliant | Compliant |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | 0°C ~ 95°C | -- | 0 ~ 85 | 0 ~ 95 |
| Organization | 64MX16 | -- | 1Gx16 | 512Mx8 |
| Package / Case | FBGA | FBGA | -- | -- |
| Supply Voltage | 1.8V | -- | -- | 1.2 |
| Access Time Max | 450ps | -- | -- | -- |
| Address Bus Width | 16b | -- | -- | -- |
| Density | 1Gb | -- | -- | -- |
| Max Frequency | 667MHz | -- | -- | -- |
| Supply Current | 155mA | -- | -- | -- |
| Memory Size | -- | -- | 16G | 4G |
| Action |
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