Samsung Semiconductor K4M561633G-BN75 Memory ICs
["Integrated Circuits (ICs)", "Memory", "Unclassified Memory"]
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4M561633G-BN75
Detailed Description
["Integrated Circuits (ICs)", "Memory", "Unclassified Memory"]
Package
FBGA-54
Lifecycle Status
Active
Datasheet
K4M561633G-BN75 Datasheet
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Technical Specifications
Samsung Semiconductor K4M561633G-BN75 Memory ICs technical specifications.
General
Interface
SYNCHRONOUS DRAM
RoHS
Yes
Number of Pins
54
Operating Temperature
-25 ~ 85
Supply Voltage
3
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B54
Width
8
Length
11
Number of Functions
1
Alternate Parts Comparison (K4M561633G-BN75 vs K4B2G1646Q-BCMA vs K4B2G0846D-HCH9)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| RoHS | Yes | Yes | Compliant |
| Package | FBGA-54 | FBGA | BGA |
| Operating Temperature | -25 ~ 85 | -- | 0 ~ 95 |
| Supply Voltage | 3 | -- | 1.425 ~ 1.575 |
| Interface | SYNCHRONOUS DRAM | -- | SSTL_1.5 |
| Number of Pins | 54 | -- | 78 |
| Memory Organization | 16MX16 | -- | 256Mx8 |
| Access Mode | FOUR BANK PAGE BURST | -- | -- |
| Access Time Max | 5.4 | -- | -- |
| Additional Feature | AUTO/SELF REFRESH | -- | -- |
| Clock Frequency Max Fclk | 133 | -- | -- |
| Input Voltage | 3 V | -- | -- |
| Action |
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