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Samsung Semiconductor K4T1G164QF-BCE6 DRAM

DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84,

15,982 ActiveSamsung SemiconductorFBGA$4.35RoHS
K4T1G164QF-BCE6 - No Image Available

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K4T1G164QF-BCE6
Part Number (MPN)
K4T1G164QF-BCE6
Detailed Description
DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84,
Package
FBGA
Key Features
Package / Case: FBGA; Supply Voltage: 1.8V
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF K4T1G164QF-BCE6 Datasheet
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Technical Specifications

Samsung Semiconductor K4T1G164QF-BCE6 DRAM technical specifications.

General

RoHS
Yes
Package / Case
FBGA
Operating Temperature
0°C ~ 95°C
Supply Voltage
1.8V
Access Time
0.45ns
Access Time Max
0.45ns
Density
1Gb
Max Frequency
667MHz

Alternate Parts Comparison (K4T1G164QF-BCE6 vs K4AAG165WA-BCTD vs K4M51163PE-BG75 vs K4J10324KE-HC12)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseFBGA--FBGAFBGA
Operating Temperature0°C ~ 95°C0 ~ 85--0 ~ 85
RoHSYesCompliantCompliant--
Density1Gb----1G
Supply Voltage1.8V------
Access Time0.45ns------
Access Time Max0.45ns------
Max Frequency667MHz------
Mounting Type--Surface Mount--Surface Mount
Number of Pins--96--136
Automotive--No--No
Number of Internal Banks--16--8
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