Samsung Semiconductor K4T1G164QF-BCE6 DRAM
DRAM Memory IC 1Gb 667MHz 1.8V FBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T1G164QF-BCE6
Detailed Description
DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84,
Package
FBGA
Key Features
Package / Case: FBGA; Supply Voltage: 1.8V
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4T1G164QF-BCE6 Datasheet
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Technical Specifications
Samsung Semiconductor K4T1G164QF-BCE6 DRAM technical specifications.
General
Interface
DDR2 DRAM
RoHS
Yes
Number of Pins
84
Package / Case
FBGA
Operating Temperature
0°C ~ 95°C
Supply Voltage
1.8V
Access Time
0.45ns
Access Time Max
0.45ns
Density
1Gb
Max Frequency
667MHz
Alternate Parts Comparison (K4T1G164QF-BCE6 vs K4AAG165WA-BCTD vs K4M51163PE-BG75 vs K4J10324KE-HC12)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | FBGA | -- | FBGA | FBGA |
| Operating Temperature | 0°C ~ 95°C | 0 ~ 85 | -- | 0 ~ 85 |
| Number of Pins | 84 | 96 | -- | 136 |
| RoHS | Yes | Compliant | Compliant | -- |
| Interface | DDR2 DRAM | POD | -- | -- |
| Density | 1Gb | -- | -- | 1G |
| Package | BGA-84 | BGA | -- | -- |
| Supply Voltage | 1.8V | -- | -- | -- |
| Access Time | 0.45ns | -- | -- | -- |
| Access Time Max | 0.45ns | -- | -- | -- |
| Clock Frequency Max Fclk | 333 MHz | -- | -- | -- |
| Input Voltage | 1.8 V | -- | -- | -- |
| Action |
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