Samsung Semiconductor K4T1G084QF-BCE6 DRAM
DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T1G084QF-BCE6
Detailed Description
DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60
Package
FBGA
Key Features
Package / Case: FBGA; Supply Voltage: 1.8V
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4T1G084QF-BCE6 Datasheet
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Technical Specifications
Samsung Semiconductor K4T1G084QF-BCE6 DRAM technical specifications.
General
RoHS
Yes
Package / Case
FBGA
Operating Temperature
0°C ~ 95°C
Supply Voltage
1.8V
Access Time
0.45ns
Address Bus Width
17b
Density
1Gb
Max Frequency
667MHz
Alternate Parts Comparison (K4T1G084QF-BCE6 vs K4AAG165WA-BCTD vs K4M51163PE-BG75 vs K4A4G085WE-BCRC)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Compliant | Compliant |
| Operating Temperature | 0°C ~ 95°C | 0 ~ 85 | -- | 0 ~ 95 |
| Package / Case | FBGA | -- | FBGA | -- |
| Supply Voltage | 1.8V | -- | -- | 1.2 |
| Access Time | 0.45ns | -- | -- | -- |
| Address Bus Width | 17b | -- | -- | -- |
| Density | 1Gb | -- | -- | -- |
| Max Frequency | 667MHz | -- | -- | -- |
| Mounting Type | -- | Surface Mount | -- | Surface Mount |
| Memory Size | -- | 16G | -- | 4G |
| Interface | -- | POD | -- | POD |
| Number of Pins | -- | 96 | -- | 78 |
| Action |
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