onsemi MJD32T4G BJTs
PNP BJT Transistor, 40V, 3A, DPAK, 3MHz
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD32T4G
Detailed Description
PNP BJT Transistor, 40V, 3A, DPAK, 3MHz
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
MJD32T4G Datasheet
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Technical Specifications
onsemi MJD32T4G BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
10 @ 3A, 4V
Power Max
1.56 W
Frequency Transition
3MHz
Transistor Type
PNP
Current Collector IC Max
3 A
Voltage Collector Emitter Breakdown Max
40 V
Alternate Parts Comparison (MJD32T4G vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Number of Pins | -- | 3 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Non-Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 70 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 60 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 1.1 V | -- | -- |
| Collector Emitter Voltage Vceo | -- | 60 V | -- | -- |
| Current Rating | -- | 10 A | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Emitter Base Voltage Vebo | -- | 5 V | -- | -- |
| Action |
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