onsemi MJD112G BJTs
NPN Darlington Transistor 100V 2A DPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD112G
Detailed Description
NPN Darlington Transistor 100V 2A DPAK
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
MJD112G Datasheet
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Technical Specifications
onsemi MJD112G BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
1000 @ 2A, 3V
Power Max
1.75 W
Frequency Transition
25MHz
Transistor Type
NPN - Darlington
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (MJD112G vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Number of Pins | -- | 3 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Non-Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 70 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 60 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 1.1 V | -- | -- |
| Collector Emitter Voltage Vceo | -- | 60 V | -- | -- |
| Current Rating | -- | 10 A | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Emitter Base Voltage Vebo | -- | 5 V | -- | -- |
| Action |
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