onsemi MJD31CRLG BJTs
NPN BJT 100V 3A DPAK Power Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD31CRLG
Detailed Description
NPN BJT 100V 3A DPAK Power Transistor
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
MJD31CRLG Datasheet
Quick Jump:
Technical Specifications
onsemi MJD31CRLG BJTs technical specifications.
General
Series
MJD31C
RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
10 @ 3A, 4V
Power Max
1.56 W
Frequency Transition
3MHz
Transistor Type
NPN
Alternate Parts Comparison (MJD31CRLG vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Production | Active | Active |
| Current Collector Cutoff Max | 50µA | 50µA | 20µA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 3 A | 10 A | 4 A | 5 A |
| Dc Current Gain Hfe Min IC Vce | 10 @ 3A, 4V | 20 @ 4A, 4V | 85 @ 500mA, 1V | 45 @ 2A, 1V |
| Power Max | 1.56 W | 1.75 W | 1.75 W | 1.4 W |
| Transistor Type | NPN | NPN | NPN | PNP |
| Vce Saturation Max Ib IC | 1.2V @ 375mA, 3A | 8V @ 3.3A, 10A | 500mV @ 200mA, 2A | 1.8V @ 1A, 5A |
| Voltage Collector Emitter Breakdown Max | 100 V | 60 V | 45 V | 25 V |
| RoHS | Yes | Compliant | Yes | -- |
| Action |
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