onsemi MJD32CG BJTs
PNP BJT 100V 3A DPAK Power Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD32CG
Detailed Description
PNP BJT 100V 3A DPAK Power Transistor
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
MJD32CG Datasheet
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Technical Specifications
onsemi MJD32CG BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
TRANS PNP 100V 3A DPAK
Detailed Description
Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 1.56 W Surface Mount DPAK
Dc Current Gain Hfe Min IC Vce
10 @ 3A, 4V
Power Max
1.56 W
Frequency Transition
3MHz
Transistor Type
PNP
Alternate Parts Comparison (MJD32CG vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Number of Pins | -- | 3 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Non-Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 70 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 60 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 1.1 V | -- | -- |
| Collector Emitter Voltage Vceo | -- | 60 V | -- | -- |
| Current Rating | -- | 10 A | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Emitter Base Voltage Vebo | -- | 5 V | -- | -- |
| Action |
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