onsemi NJVMJB42CT4G BJTs
6.0 A, 100 V PNP Bipolar Power Transistor, D2PAK 2 LEAD, 800-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NJVMJB42CT4G
Detailed Description
6.0 A, 100 V PNP Bipolar Power Transistor, D2PAK 2 LEAD, 800-REEL
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
NJVMJB42CT4G Datasheet
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Technical Specifications
onsemi NJVMJB42CT4G BJTs technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
15 @ 3A, 4V
Power Max
2 W
Frequency Transition
3MHz
Transistor Type
PNP
Current Collector IC Max
6 A
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (NJVMJB42CT4G vs NJVMJB44H11T4G vs NJVMJB45H11T4G vs AFGB40T65SQDN)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 6 A | 10 A | 10 A | 80 A |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 2 W | 2 W | 2 W | 238 W |
| Voltage Collector Emitter Breakdown Max | 100 V | 80 V | 80 V | 650 V |
| Current Collector Cutoff Max | 700µA | 10µA | 10µA | -- |
| Dc Current Gain Hfe Min IC Vce | 15 @ 3A, 4V | 40 @ 4A, 1V | 40 @ 4A, 1V | -- |
| Frequency Transition | 3MHz | 50MHz | 40MHz | -- |
| Action |
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