onsemi AFGB40T65SQDN BJTs
IGBT, 650V FS4 High speed version, for OBC application in D2pak 650V, 40A, D2PAK, 800-REEL

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
AFGB40T65SQDN
Detailed Description
IGBT, 650V FS4 High speed version, for OBC application in D2pak 650V, 40A, D2PAK, 800-REEL
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
AFGB40T65SQDN Datasheet
Quick Jump:
Technical Specifications
onsemi AFGB40T65SQDN BJTs technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Gate Charge
76 nC
Td on Off 25 C
17.6ns/75.2ns
Test Condition
400V, 40A, 6Ohm, 15V
Reverse Recovery Time Trr
131 ns
Voltage Collector Emitter Breakdown Max
650 V
Current Collector IC Max
80 A
Alternate Parts Comparison (AFGB40T65SQDN vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 6 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 40 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 40 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -400 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 40 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | -200 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Dual | Single |
| Action |
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