onsemi ISL9V5045S3ST-F085C BJTs
Insulated Gate Bipolar Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
ISL9V5045S3ST-F085C
Base Model
Detailed Description
Insulated Gate Bipolar Transistor
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
ISL9V5045S3ST-F085C Datasheet
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Technical Specifications
onsemi ISL9V5045S3ST-F085C BJTs technical specifications.
General
Series
EcoSPARK®
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 175°C (TJ)
Lifecycle Status
Active
Power Max
300 W
Input Type
Logic
Gate Charge
32 nC
Td on Off 25 C
-/10.8µs
Voltage Collector Emitter Breakdown Max
480 V
Alternate Parts Comparison (ISL9V5045S3ST-F085C vs ISL9V5045S3ST-F085 vs ISL9V5036S3ST-R4971 vs ISL9R3060G2-F085)
Side-by-side technical parameter comparison of related primary models in this product family.
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| Manufacturer | -- | -- | -- | -- |
| Subcategory | -- | -- | -- | -- |
| Power Management Ics Product Type | -- | -- | -- | -- |
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