onsemi MJB5742T4G BJTs
400V 8A NPN Darlington BJT Power Transistor, D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJB5742T4G
Detailed Description
400V 8A NPN Darlington BJT Power Transistor, D2PAK
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
MJB5742T4G Datasheet
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Technical Specifications
onsemi MJB5742T4G BJTs technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
200 @ 4A, 5V
Power Max
100 W
Transistor Type
NPN - Darlington
Current Collector IC Max
8 A
Voltage Collector Emitter Breakdown Max
400 V
Vce Saturation Max Ib IC
3V @ 400mA, 8A
Alternate Parts Comparison (MJB5742T4G vs MJB44H11T4G vs MJB41CT4G vs MJB45H11T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 8 A | 10 A | 6 A | 10 A |
| Dc Current Gain Hfe Min IC Vce | 200 @ 4A, 5V | 40 @ 4A, 1V | 15 @ 3A, 4V | 40 @ 4A, 1V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 100 W | 2 W | 2 W | 2 W |
| Transistor Type | NPN - Darlington | NPN | NPN | PNP |
| Vce Saturation Max Ib IC | 3V @ 400mA, 8A | 1V @ 400mA, 8A | 1.5V @ 600mA, 6A | 1V @ 400mA, 8A |
| Voltage Collector Emitter Breakdown Max | 400 V | 80 V | 100 V | 80 V |
| Action |
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