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onsemi MJB45H11G BJTs

PNP BJT Transistor, 80V, 10A, D2PAK

25 ActiveonsemiMJB45HTO-263-3, D2PAK (2 Leads + Tab), TO-263AB$2.69
MJB45H11G - No Image Available

Same model may have multiple batches, images only for reference.

MJB45H11G
Manufacturer
Part Number (MPN)
MJB45H11G
Base Model
Detailed Description
PNP BJT Transistor, 80V, 10A, D2PAK
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
PDF MJB45H11G Datasheet
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Ordering Code Family

MJB45H groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi MJB45H11G BJTs technical specifications.

General

Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 4A, 1V
Power Max
2 W
Frequency Transition
40MHz
Transistor Type
PNP
Current Collector IC Max
10 A
Voltage Collector Emitter Breakdown Max
80 V

Alternate Parts Comparison (MJB45H11G vs MJB45H11T4G vs MJB5742T4G vs MJB44H11T4G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max10 A10 A8 A10 A
Dc Current Gain Hfe Min IC Vce40 @ 4A, 1V40 @ 4A, 1V200 @ 4A, 5V40 @ 4A, 1V
DescriptionTRANS PNP 80V 10A D2PAKTRANS PNP 80V 10A D2PAKTRANS NPN DARL 400V 8A D2PAKTRANS NPN 80V 10A D2PAK
Detailed DescriptionBipolar (BJT) Transistor PNP 80 V 10 A 40MHz 2 W Surface Mount D2PAKBipolar (BJT) Transistor PNP 80 V 10 A 40MHz 2 W Surface Mount D2PAKBipolar (BJT) Transistor NPN - Darlington 400 V 8 A 100 W Surface Mount D2PAKBipolar (BJT) Transistor NPN 80 V 10 A 50MHz 2 W Surface Mount D2PAK
Power Max2 W2 W100 W2 W
Transistor TypePNPPNPNPN - DarlingtonNPN
Vce Saturation Max Ib IC1V @ 400mA, 8A1V @ 400mA, 8A3V @ 400mA, 8A1V @ 400mA, 8A
Voltage Collector Emitter Breakdown Max80 V80 V400 V80 V
Action

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