onsemi MJB45H11G BJTs
PNP BJT Transistor, 80V, 10A, D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJB45H11G
Base Model
Detailed Description
PNP BJT Transistor, 80V, 10A, D2PAK
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
MJB45H11G Datasheet
Quick Jump:
Technical Specifications
onsemi MJB45H11G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 4A, 1V
Power Max
2 W
Frequency Transition
40MHz
Transistor Type
PNP
Current Collector IC Max
10 A
Alternate Parts Comparison (MJB45H11G vs MJB45H11T4G vs MJB5742T4G vs MJB44H11T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 10 A | 10 A | 8 A | 10 A |
| Dc Current Gain Hfe Min IC Vce | 40 @ 4A, 1V | 40 @ 4A, 1V | 200 @ 4A, 5V | 40 @ 4A, 1V |
| Power Max | 2 W | 2 W | 100 W | 2 W |
| Transistor Type | PNP | PNP | NPN - Darlington | NPN |
| Vce Saturation Max Ib IC | 1V @ 400mA, 8A | 1V @ 400mA, 8A | 3V @ 400mA, 8A | 1V @ 400mA, 8A |
| Voltage Collector Emitter Breakdown Max | 80 V | 80 V | 400 V | 80 V |
| Current Collector Cutoff Max | 10µA | 10µA | -- | 10µA |
| Frequency Transition | 40MHz | 40MHz | -- | 50MHz |
| Action |
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