onsemi MJB44H11T4G BJTs
NPN BJT Power Transistor, 80V, 10A, 50W, D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJB44H11T4G
Base Model
Detailed Description
NPN BJT Power Transistor, 80V, 10A, 50W, D2PAK
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
MJB44H11T4G Datasheet
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Technical Specifications
onsemi MJB44H11T4G BJTs technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 4A, 1V
Power Max
2 W
Frequency Transition
50MHz
Transistor Type
NPN
Current Collector IC Max
10 A
Voltage Collector Emitter Breakdown Max
80 V
Alternate Parts Comparison (MJB44H11T4G vs MJB44H11G vs MJB5742T4G vs MJB41CT4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | -- | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | -- | Active | Active |
| Current Collector IC Max | 10 A | -- | 8 A | 6 A |
| Dc Current Gain Hfe Min IC Vce | 40 @ 4A, 1V | -- | 200 @ 4A, 5V | 15 @ 3A, 4V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 2 W | -- | 100 W | 2 W |
| Transistor Type | NPN | -- | NPN - Darlington | NPN |
| Vce Saturation Max Ib IC | 1V @ 400mA, 8A | -- | 3V @ 400mA, 8A | 1.5V @ 600mA, 6A |
| Voltage Collector Emitter Breakdown Max | 80 V | -- | 400 V | 100 V |
| Action |
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