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onsemi MJB42CT4G BJTs

PNP BJT, 100V, 6A, 3MHz, D2PAK Power Transistor

48 ActiveonsemiTO-263-3, D2PAK (2 Leads + Tab), TO-263AB$2.36
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MJB42CT4G
Manufacturer
Part Number (MPN)
MJB42CT4G
Detailed Description
PNP BJT, 100V, 6A, 3MHz, D2PAK Power Transistor
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
PDF MJB42CT4G Datasheet
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Technical Specifications

onsemi MJB42CT4G BJTs technical specifications.

General

Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
15 @ 3A, 4V
Power Max
2 W
Frequency Transition
3MHz
Transistor Type
PNP
Current Collector IC Max
6 A
Voltage Collector Emitter Breakdown Max
100 V

Alternate Parts Comparison (MJB42CT4G vs MJB5742T4G vs MJB44H11T4G vs MJB41CT4G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max6 A8 A10 A6 A
Dc Current Gain Hfe Min IC Vce15 @ 3A, 4V200 @ 4A, 5V40 @ 4A, 1V15 @ 3A, 4V
DescriptionTRANS PNP 100V 6A D2PAKTRANS NPN DARL 400V 8A D2PAKTRANS NPN 80V 10A D2PAKTRANS NPN 100V 6A D2PAK
Detailed DescriptionBipolar (BJT) Transistor PNP 100 V 6 A 3MHz 2 W Surface Mount D2PAKBipolar (BJT) Transistor NPN - Darlington 400 V 8 A 100 W Surface Mount D2PAKBipolar (BJT) Transistor NPN 80 V 10 A 50MHz 2 W Surface Mount D2PAKBipolar (BJT) Transistor NPN 100 V 6 A 3MHz 2 W Surface Mount D2PAK
Power Max2 W100 W2 W2 W
Transistor TypePNPNPN - DarlingtonNPNNPN
Vce Saturation Max Ib IC1.5V @ 600mA, 6A3V @ 400mA, 8A1V @ 400mA, 8A1.5V @ 600mA, 6A
Voltage Collector Emitter Breakdown Max100 V400 V80 V100 V
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