onsemi MJB42CT4G BJTs
PNP BJT, 100V, 6A, 3MHz, D2PAK Power Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJB42CT4G
Detailed Description
PNP BJT, 100V, 6A, 3MHz, D2PAK Power Transistor
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
MJB42CT4G Datasheet
Quick Jump:
Technical Specifications
onsemi MJB42CT4G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
15 @ 3A, 4V
Power Max
2 W
Frequency Transition
3MHz
Transistor Type
PNP
Current Collector IC Max
6 A
Alternate Parts Comparison (MJB42CT4G vs MJB5742T4G vs MJB44H11T4G vs MJB41CT4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 6 A | 8 A | 10 A | 6 A |
| Dc Current Gain Hfe Min IC Vce | 15 @ 3A, 4V | 200 @ 4A, 5V | 40 @ 4A, 1V | 15 @ 3A, 4V |
| Power Max | 2 W | 100 W | 2 W | 2 W |
| Transistor Type | PNP | NPN - Darlington | NPN | NPN |
| Vce Saturation Max Ib IC | 1.5V @ 600mA, 6A | 3V @ 400mA, 8A | 1V @ 400mA, 8A | 1.5V @ 600mA, 6A |
| Voltage Collector Emitter Breakdown Max | 100 V | 400 V | 80 V | 100 V |
| RoHS | Yes | Yes | -- | Yes |
| Case Outline | 418B-04 | 418B-04 | -- | 418B-04 |
| Action |
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