onsemi MPSH17G RF BJT
RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MPSH17G
Detailed Description
RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)
Package
TO-226-3, TO-92-3 Long Body
Lifecycle Status
Obsolete
Datasheet
MPSH17G Datasheet
Quick Jump:
Technical Specifications
onsemi MPSH17G RF BJT technical specifications.
General
RoHS
Yes
Package / Case
TO-226-3, TO-92-3 Long Body
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Gain
24dB
Power Max
350mW
Dc Current Gain Hfe Min IC Vce
25 @ 5mA, 10V
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Alternate Parts Comparison (MPSH17G vs MPSH17RLRAG vs MPSH17 vs MPSH10RLRAG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 Long Body | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 Long Body | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Dc Current Gain Hfe Min IC Vce | 25 @ 5mA, 10V | 25 @ 5mA, 10V | 25 @ 5mA, 10V | 60 @ 4mA, 10V |
| Frequency Transition | 800MHz | 800MHz | 800MHz | 650MHz |
| Power Max | 350mW | 350mW | 350mW | 350mW |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 15V | 15V | 15V | 25V |
| RoHS | Yes | Yes | -- | Yes |
| Gain | 24dB | 24dB | 24dB | -- |
| Noise Figure Db Typ F | 6dB @ 200MHz | 6dB @ 200MHz | 6dB @ 200MHz | -- |
| Action |
More Parts in RF BJT
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