onsemi MPS5179G RF BJT
RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole TO-92 (TO-226)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MPS5179G
Detailed Description
RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole TO-92 (TO-226)
Package
TO-226-3, TO-92-3 Long Body
Lifecycle Status
Obsolete
Datasheet
MPS5179G Datasheet
Quick Jump:
Technical Specifications
onsemi MPS5179G RF BJT technical specifications.
General
RoHS
Yes
Package / Case
TO-226-3, TO-92-3 Long Body
Mounting Type
Through Hole
Lifecycle Status
Obsolete
Power Max
200mW
Dc Current Gain Hfe Min IC Vce
25 @ 3mA, 1V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V
Frequency Transition
2GHz
Alternate Parts Comparison (MPS5179G vs MPS751-D26Z vs MPS5179RLRP vs MPS3563G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 Long Body | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 Long Body, Formed Leads | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Obsolete | Active | Obsolete | Obsolete |
| Current Collector IC Max | 50mA | 2 A | 50mA | 50 mA |
| Dc Current Gain Hfe Min IC Vce | 25 @ 3mA, 1V | 40 @ 2A, 2V | 25 @ 3mA, 1V | 20 @ 8mA, 10V |
| Frequency Transition | 2GHz | 75MHz | 2GHz | 600MHz |
| Power Max | 200mW | 625 mW | 200W | 350 mW |
| Transistor Type | NPN | PNP | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 12V | 60 V | 12V | 12 V |
| RoHS | Yes | Yes | -- | Yes |
| Package | TO226-3 | TO-92-3 | -- | TO-92 |
| Operating Temperature | -- | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Action |
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