onsemi MPS5179 RF BJT
RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole TO-92 (TO-226)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MPS5179
Detailed Description
RF Transistor NPN 12V 50mA 2GHz 200mW Through Hole TO-92 (TO-226)
Package
TO-226-3, TO-92-3 Long Body
Lifecycle Status
Obsolete
Datasheet
MPS5179 Datasheet
Quick Jump:
Technical Specifications
onsemi MPS5179 RF BJT technical specifications.
General
Series
MPS5179
RoHS
Yes
Package / Case
TO-226-3, TO-92-3 Long Body
Mounting Type
Through Hole
Lifecycle Status
Obsolete
Power Max
200mW
Dc Current Gain Hfe Min IC Vce
25 @ 3mA, 1V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V
Alternate Parts Comparison (MPS5179 vs MPS751-D26Z vs MPS3563G vs MPS3563)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 Long Body | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 Long Body | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Obsolete | Active | Obsolete | Obsolete |
| Current Collector IC Max | 50mA | 2 A | 50 mA | 50 mA |
| Dc Current Gain Hfe Min IC Vce | 25 @ 3mA, 1V | 40 @ 2A, 2V | 20 @ 8mA, 10V | 20 @ 8mA, 10V |
| Frequency Transition | 2GHz | 75MHz | 600MHz | 600MHz |
| Power Max | 200mW | 625 mW | 350 mW | 350 mW |
| Transistor Type | NPN | PNP | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 12V | 60 V | 12 V | 12 V |
| RoHS | Yes | Yes | Yes | -- |
| Package | TO-92-3 | TO-92-3 | TO-92 | -- |
| Operating Temperature | -- | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Action |
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