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onsemi MCH6001-TL-E RF BJT

RF Transistor, NPN Dual, 8 V, 150 mA, fT = 16 GHz, SC 88FL / MCPH6, 3000-REEL

162,000 Activeonsemi6-SMD, Flat Leads$0.44
MCH6001-TL-E 6-SMD, Flat Leads package illustration

Same model may have multiple batches, images only for reference.

MCH6001-TL-E
Manufacturer
Part Number (MPN)
MCH6001-TL-E
Detailed Description
RF Transistor, NPN Dual, 8 V, 150 mA, fT = 16 GHz, SC 88FL / MCPH6, 3000-REEL
Package
6-SMD, Flat Leads
Lifecycle Status
Active
Datasheet
PDF MCH6001-TL-E Datasheet
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Technical Specifications

onsemi MCH6001-TL-E RF BJT technical specifications.

General

RoHS
Yes
Package / Case
6-SMD, Flat Leads
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Power Max
600mW
Dc Current Gain Hfe Min IC Vce
60 @ 50mA, 5V
Current Collector IC Max
150mA
Transistor Type
2 NPN (Dual)
Voltage Collector Emitter Breakdown Max
8V

Alternate Parts Comparison (MCH6001-TL-E vs MCH4021-TL-E vs MCH12140D vs MCH4009-TL-H)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case6-SMD, Flat Leads4-SMD, Flat Leads8-SOICSOT-343F
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)-40°C ~ 85°C150°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusActiveObsoleteActiveObsolete
PackageSOT-363-6SC-82FL , MCPH-4TSSOP-14SOT-343
Current Collector IC Max150mA150mA--40mA
Dc Current Gain Hfe Min IC Vce60 @ 50mA, 5V60 @ 50mA, 5V--50 @ 5mA, 1V
Frequency Transition16GHz16GHz--25GHz
Gain16dB17.5dB--13.5dB
Noise Figure Db Typ F1.2dB @ 1GHz1.2dB @ 1GHz--1.1dB @ 2GHz
Power Max600mW400mW--120mW
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