onsemi BF959ZL1G RF BJT
RF Transistor NPN 20V 100mA 700MHz 625mW Through Hole TO-92 (TO-226)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BF959ZL1G
Detailed Description
RF Transistor NPN 20V 100mA 700MHz 625mW Through Hole TO-92 (TO-226)
Package
TO-226-3, TO-92-3 Long Body, Formed Leads
Lifecycle Status
Obsolete
Datasheet
BF959ZL1G Datasheet
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Technical Specifications
onsemi BF959ZL1G RF BJT technical specifications.
General
RoHS
Yes
Package / Case
TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Power Max
625mW
Dc Current Gain Hfe Min IC Vce
40 @ 20mA, 10V
Current Collector IC Max
100mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
20V
Alternate Parts Comparison (BF959ZL1G vs BF720T1G vs BF959RL1 vs BF959RL1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads | TO-261-4, TO-261AA | TO-226-3, TO-92-3 Long Body, Formed Leads | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | Active | Obsolete | Obsolete |
| Current Collector IC Max | 100mA | 100 mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 40 @ 20mA, 10V | 50 @ 25mA, 20V | 40 @ 20mA, 10V | 40 @ 20mA, 10V |
| Frequency Transition | 700MHz | 60MHz | 700MHz | 700MHz |
| Power Max | 625mW | 1.5 W | 625mW | 625mW |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 20V | 300 V | 20V | 20V |
| RoHS | Yes | -- | Yes | Yes |
| Noise Figure Db Typ F | 3dB @ 200MHz | -- | 3dB @ 200MHz | 3dB @ 200MHz |
| Action |
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