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onsemi MMBT918LT1 RF BJT

MMBT918LT1 by onsemi · RF BJT · SOT-23-6

99,999 ActiveonsemiSOT-23-6$0.07
MMBT918LT1 - No Image Available

Same model may have multiple batches, images only for reference.

MMBT918LT1
Manufacturer
Part Number (MPN)
MMBT918LT1
Package
SOT-23-6
Lifecycle Status
Active
Datasheet
PDF MMBT918LT1 Datasheet
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Technical Specifications

onsemi MMBT918LT1 RF BJT technical specifications.

General

RoHS
True
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
15 V
Collector Base Voltage Vcbo
30 V
Emitter Base Voltage Vebo
3 V
Collector Emitter Saturation Voltage
400 mV
Maximum Dc Collector Current
50 mA

Alternate Parts Comparison (MMBT918LT1 vs MMBT2222ATT3G vs MMBT3906LT1H vs MMBT2907AM3T5G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case--SC-75, SOT-416TO-236-3, SC-59, SOT-23-3SOT-723
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature- 55°C ~ + 150°C-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle Status--ActiveActiveActive
Current Collector Cutoff Max--10nA (ICBO)50nA10nA (ICBO)
Current Collector IC Max--600 mA200 mA600 mA
Dc Current Gain Hfe Min IC Vce--100 @ 150mA, 10V100 @ 10mA, 1V100 @ 150mA, 10V
Description--------
Detailed Description--------
Frequency Transition--300MHz250MHz200MHz
Power Max--150 mW225 mW265 mW
Transistor Type--NPNPNPPNP
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