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onsemi MPS5179RLRP RF BJT

RF Transistor NPN 12V 50mA 2GHz 200W Through Hole TO-92 (TO-226)

In StockonsemiTO-226-3, TO-92-3 Long Body, Formed Leads
MPS5179RLRP TO-226-3, TO-92-3 Long Body, Formed Leads package illustration

Same model may have multiple batches, images only for reference.

MPS5179RLRP
Manufacturer
Part Number (MPN)
MPS5179RLRP
Detailed Description
RF Transistor NPN 12V 50mA 2GHz 200W Through Hole TO-92 (TO-226)
Package
TO-226-3, TO-92-3 Long Body, Formed Leads
Lifecycle Status
Obsolete
Datasheet
PDF MPS5179RLRP Datasheet
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Technical Specifications

onsemi MPS5179RLRP RF BJT technical specifications.

General

Package / Case
TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Gain
15dB
Power Max
200W
Dc Current Gain Hfe Min IC Vce
25 @ 3mA, 1V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V

Alternate Parts Comparison (MPS5179RLRP vs MPS5179RLRPG vs MPS5179RLRAG vs MPS751-D26Z)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-226-3, TO-92-3 Long Body, Formed LeadsTO-226-3, TO-92-3 Long Body, Formed LeadsTO-226-3, TO-92-3 Long Body, Formed LeadsTO-226-3, TO-92-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Lifecycle StatusObsoleteObsoleteObsoleteActive
Current Collector IC Max50mA50mA50mA2 A
Dc Current Gain Hfe Min IC Vce25 @ 3mA, 1V25 @ 3mA, 1V25 @ 3mA, 1V40 @ 2A, 2V
Frequency Transition2GHz2GHz2GHz75MHz
Power Max200W200W200W625 mW
Transistor TypeNPNNPNNPNPNP
Voltage Collector Emitter Breakdown Max12V12V12V60 V
Package--TO-226-3,TO-92-3LongBody(FormedLeads)TO-226-3,TO-92-3LongBody(FormedLeads)TO-92-3
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