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onsemi MPS751-D26Z BJTs

Bipolar Transistors - BJT Sil PNP Transistor

216,000 ActiveonsemiTO-226-3, TO-92-3 (TO-226AA) Formed Leads$0.26
MPS751-D26Z - No Image Available

Same model may have multiple batches, images only for reference.

MPS751-D26Z
Manufacturer
Part Number (MPN)
MPS751-D26Z
Detailed Description
Bipolar Transistors - BJT Sil PNP Transistor
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lifecycle Status
Active
Datasheet
PDF MPS751-D26Z Datasheet
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Technical Specifications

onsemi MPS751-D26Z BJTs technical specifications.

General

Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
40 @ 2A, 2V
Power Max
625 mW
Frequency Transition
75MHz
Transistor Type
PNP
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
60 V

Alternate Parts Comparison (MPS751-D26Z vs MPS2222A vs MPS5179-D75Z vs MPSH17RLRAG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-226-3, TO-92-3----TO-226-3, TO-92-3
Mounting TypeThrough Hole----Through Hole
Operating Temperature150°C (TJ)-----55°C ~ 150°C (TJ)
Base Part Number------MPSH17
Dc Current Gain Hfe Min IC Vce40 @ 2A, 2V----25 @ 5mA, 10V
Detailed DescriptionBipolar (BJT) Transistor PNP 60 V 2 A 75MHz 625 mW Through Hole TO-92-3----RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92-3
Frequency Transition75MHz----800MHz
Gain------24dB
Noise Figure Db Typ F------6dB @ 200MHz
Power Max625 mW----350mW
Transistor TypePNP----NPN
Voltage Collector Emitter Breakdown Max60 V----15V
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