onsemi MJD47T4G BJTs
1.0 A, 250 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD47T4G
Base Model
Detailed Description
1.0 A, 250 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
MJD47T4G Datasheet
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Technical Specifications
onsemi MJD47T4G BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 300mA, 10V
Power Max
1.56 W
Frequency Transition
10MHz
Transistor Type
NPN
Current Collector IC Max
1 A
Voltage Collector Emitter Breakdown Max
250 V
Alternate Parts Comparison (MJD47T4G vs MJD47T4 vs MJD3055T4G vs MJD148T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) | -- | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Number of Pins | -- | -- | 3 | -- |
| RoHS | -- | -- | Compliant | -- |
| Lifecycle Status | Active | -- | Active | Active |
| China ROHS | -- | -- | Non-Compliant | -- |
| Collector Base Voltage Vcbo | -- | -- | 70 V | -- |
| Collector Emitter Breakdown Voltage | -- | -- | 60 V | -- |
| Collector Emitter Saturation Voltage | -- | -- | 1.1 V | -- |
| Collector Emitter Voltage Vceo | -- | -- | 60 V | -- |
| Current Rating | -- | -- | 10 A | -- |
| Element Configuration | -- | -- | Single | -- |
| Emitter Base Voltage Vebo | -- | -- | 5 V | -- |
| Action |