onsemi MJD42CRLG BJTs
PNP BJT Power Transistor, 100V, 6A, DPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD42CRLG
Detailed Description
PNP BJT Power Transistor, 100V, 6A, DPAK
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
MJD42CRLG Datasheet
Quick Jump:
Technical Specifications
onsemi MJD42CRLG BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
15 @ 3A, 4V
Power Max
1.75 W
Frequency Transition
3MHz
Transistor Type
PNP
Current Collector IC Max
6 A
Alternate Parts Comparison (MJD42CRLG vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Production | Active | Active |
| Current Collector Cutoff Max | 50µA | 50µA | 20µA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 6 A | 10 A | 4 A | 5 A |
| Dc Current Gain Hfe Min IC Vce | 15 @ 3A, 4V | 20 @ 4A, 4V | 85 @ 500mA, 1V | 45 @ 2A, 1V |
| Power Max | 1.75 W | 1.75 W | 1.75 W | 1.4 W |
| Transistor Type | PNP | NPN | NPN | PNP |
| Vce Saturation Max Ib IC | 1.5V @ 600mA, 6A | 8V @ 3.3A, 10A | 500mV @ 200mA, 2A | 1.8V @ 1A, 5A |
| Voltage Collector Emitter Breakdown Max | 100 V | 60 V | 45 V | 25 V |
| RoHS | Yes | Compliant | Yes | -- |
| Action |
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