onsemi MJD42C BJTs
6.0 A, 100 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD42C
Detailed Description
6.0 A, 100 V PNP Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Obsolete
Datasheet
MJD42C Datasheet
Quick Jump:
Technical Specifications
onsemi MJD42C BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
15 @ 3A, 4V
Power Max
1.75 W
Frequency Transition
3MHz
Transistor Type
PNP
Current Collector IC Max
6 A
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (MJD42C vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Number of Pins | -- | 3 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Obsolete | Production | Active | Active |
| China ROHS | -- | Non-Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 70 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 60 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 1.1 V | -- | -- |
| Collector Emitter Voltage Vceo | -- | 60 V | -- | -- |
| Current Rating | -- | 10 A | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Emitter Base Voltage Vebo | -- | 5 V | -- | -- |
| Action |
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