onsemi MJD31CT4G BJTs
100V 3A NPN BJT Power Transistor, DPAK, 3MHz
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD31CT4G
Detailed Description
100V 3A NPN BJT Power Transistor, DPAK, 3MHz
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
MJD31CT4G Datasheet
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Technical Specifications
onsemi MJD31CT4G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
10 @ 3A, 4V
Power Max
1.56 W
Frequency Transition
3MHz
Transistor Type
NPN
Current Collector IC Max
3 A
Related Parts Comparison (MJD31CT4G vs MJD3055T4G vs MJD148T4G vs MJD210T4G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Production | Active | Active |
| Current Collector Cutoff Max | 50µA | 50µA | 20µA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 3 A | 10 A | 4 A | 5 A |
| Dc Current Gain Hfe Min IC Vce | 10 @ 3A, 4V | 20 @ 4A, 4V | 85 @ 500mA, 1V | 45 @ 2A, 1V |
| Power Max | 1.56 W | 1.75 W | 1.75 W | 1.4 W |
| Transistor Type | NPN | NPN | NPN | PNP |
| Vce Saturation Max Ib IC | 1.2V @ 375mA, 3A | 8V @ 3.3A, 10A | 500mV @ 200mA, 2A | 1.8V @ 1A, 5A |
| Voltage Collector Emitter Breakdown Max | 100 V | 60 V | 45 V | 25 V |
| RoHS | Yes | Compliant | Yes | -- |
| Action |
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