onsemi BF199 RF BJT
RF Transistor NPN 25V 50mA 1.1GHz 350mW Through Hole TO-92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BF199
Detailed Description
RF Transistor NPN 25V 50mA 1.1GHz 350mW Through Hole TO-92-3
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Obsolete
Datasheet
BF199 Datasheet
Quick Jump:
Technical Specifications
onsemi BF199 RF BJT technical specifications.
General
RoHS
Yes
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
38 @ 7mA, 10V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
25V
Frequency Transition
1.1GHz
Alternate Parts Comparison (BF199 vs BF240 vs 2N5770 vs PN918)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Current Collector IC Max | 50mA | 50mA | 50mA | 50mA |
| Dc Current Gain Hfe Min IC Vce | 38 @ 7mA, 10V | 65 @ 1mA, 10V | 50 @ 8mA, 10V | 20 @ 3mA, 1V |
| Power Max | 350mW | 350mW | 350mW | 350mW |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 25V | 40V | 15V | 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Frequency Transition | 1.1GHz | 1.1GHz | -- | 600MHz |
| Action |
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