onsemi 2N5770 RF BJT
RF Transistor NPN 15V 50mA 350mW Through Hole TO-92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N5770
Detailed Description
RF Transistor NPN 15V 50mA 350mW Through Hole TO-92-3
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Obsolete
Datasheet
2N5770 Datasheet
Quick Jump:
Technical Specifications
onsemi 2N5770 RF BJT technical specifications.
General
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Power Max
350mW
Dc Current Gain Hfe Min IC Vce
50 @ 8mA, 10V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Noise Figure Db Typ F
6dB @ 60MHz
Alternate Parts Comparison (2N5770 vs MCH4021-TL-E)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | |
|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | 4-SMD, Flat Leads |
| Mounting Type | Through Hole | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete |
| Current Collector IC Max | 50mA | 150mA |
| Dc Current Gain Hfe Min IC Vce | 50 @ 8mA, 10V | 60 @ 50mA, 5V |
| Gain | 15dB | 17.5dB |
| Noise Figure Db Typ F | 6dB @ 60MHz | 1.2dB @ 1GHz |
| Power Max | 350mW | 400mW |
| Transistor Type | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 15V | 8V |
| Action |
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