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Microsemi 1214-370M RF BJT

1214-370M by Microsemi · RF BJT · 55ST

In StockMicrosemi55ST
1214-370M 55ST package illustration

Same model may have multiple batches, images only for reference.

1214-370M
Manufacturer
Part Number (MPN)
1214-370M
Package
55ST
Lifecycle Status
Obsolete
Datasheet
PDF 1214-370M Datasheet
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Technical Specifications

Microsemi 1214-370M RF BJT technical specifications.

General

RoHS
Compliant
Number of Pins
3
Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Collector Emitter Breakdown Voltage
75 V
Current Collector IC Max
25 A
Dc Current Gain Hfe Min IC Vce
10 @ 5A, 5V
Frequency Transition
1.2GHz ~ 1.4GHz

Related Parts Comparison (1214-370M vs MS2201 vs SD1224 vs SD1332-05C)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseBulkM220M135M150
Mounting TypeChassis MountChassis MountChassis MountSurface Mount
Operating Temperature200°C (TJ)200°C (TJ)200°C (TJ)200°C
Current Collector IC Max25 A250mA5A30A
Dc Current Gain Hfe Min IC Vce10 @ 5A, 5V0.95 @ 10mA, 5V20 @ 500mA, 5V50 @ 14mA, 10V
Frequency Transition1.2GHz ~ 1.4GHz1.025GHz ~ 1.15GHz175MHz5.5GHz
Gain8.7dB ~ 9dB9dB7.6dB17dB
Power Max600 W10W60W180W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max75 V45V35V15V
RoHSCompliantYesYes--
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