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Microsemi JANTX2N4957UB RF BJT

JANTX2N4957UB by Microsemi · RF BJT · 3-SMD,NoLead

In Stock ActiveMicrosemi3-SMD,NoLead
JANTX2N4957UB 3-SMD,NoLead package illustration

Same model may have multiple batches, images only for reference.

JANTX2N4957UB
Manufacturer
Part Number (MPN)
JANTX2N4957UB
Package
3-SMD,NoLead
Lifecycle Status
Active
Datasheet
PDF JANTX2N4957UB Datasheet
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Technical Specifications

Microsemi JANTX2N4957UB RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Active
Transistor Type
PNP
Voltage Collector Emitter Breakdown Max
30V
Noise Figure Db Typ F
3.5dB @ 450MHz
Gain
25dB
Power Max
200mW
Dc Current Gain Hfe Min IC Vce
30 @ 5mA, 10V

Alternate Parts Comparison (JANTX2N4957UB vs JANTX2N2857UB vs JANTX2N4957 vs JANTX2N2857)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
Package3-SMD,NoLeadCase UB-4TO-66-3TO-72-3MetalCan
Mounting TypeSurface Mount----Through Hole
Operating Temperature-65°C ~ 200°C (TJ)-----65°C ~ 200°C (TJ)
Lifecycle StatusActive----Obsolete
Current Collector IC Max30mA----40mA
Dc Current Gain Hfe Min IC Vce30 @ 5mA, 10V----30 @ 3mA, 1V
Gain25dB----12.5dB ~ 21dB @ 450MHz
Noise Figure Db Typ F3.5dB @ 450MHz----4.5dB @ 450MHz
Power Max200mW----200mW
Transistor TypePNP----NPN
Voltage Collector Emitter Breakdown Max30V----15V
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