Microsemi TPR175 RF BJT
RF TRANS NPN 55V 1.09GHZ 55CX
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TPR175
Detailed Description
RF TRANS NPN 55V 1.09GHZ 55CX
Package
55CX
Lifecycle Status
Active
Datasheet
TPR175 Datasheet
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Technical Specifications
Microsemi TPR175 RF BJT technical specifications.
General
Package / Case
55CX
Packaging
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Voltage Collector Emitter Breakdown Max
55V
Transistor Type
NPN
Power Max
290W
Gain
8dB ~ 9dB
Frequency Transition
1.03GHz ~ 1.09GHz
Dc Current Gain Hfe Min IC Vce
10 @ 20mA, 5V
Related Parts Comparison (TPR175 vs TPR700 vs TPR1000A vs TPR400)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | 55CX | Bulk | Bulk | Bulk |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Operating Temperature | 200°C (TJ) | 200°C (TJ) | 200 °C | 200°C (TJ) |
| Current Collector IC Max | 9A | 55 A | 80 A | 30 A |
| Dc Current Gain Hfe Min IC Vce | 10 @ 20mA, 5V | 10 @ 1A, 5V | 10 @ 1A, 5V | 10 @ 2.5A, 5V |
| Frequency Transition | 1.03GHz ~ 1.09GHz | 1.03GHz ~ 1.09GHz | 1.09 GHz | 1.03GHz ~ 1.09GHz |
| Gain | 8dB ~ 9dB | 6.7dB | 6dB | 7.27dB |
| Power Max | 290W | 2050 W | 2900 W | 875 W |
| Voltage Collector Emitter Breakdown Max | 55V | 65 V | 65 V | 55 V |
| Transistor Type | NPN | NPN | -- | NPN |
| Lifecycle Status | -- | Obsolete | Obsolete | Obsolete |
| Action |
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