Winbond Electronics W66CM2NQUAHJ DRAM

Name: W66CM2NQUAHJ
Brand: Winbond Electronics
SKU: W66CM2NQUAHJ

DRAM Memory IC 4Gbit LVSTL_11 2.133 GHz 1.06V ~ 1.17V, 1.7V ~ 1.95V 200-WFBGA (10x14.5)

In Stock ActiveWinbond Electronics200-WFBGA (10x14.5)RoHS

Same model may have multiple batches, images only for reference.

W66CM2NQUAHJ

Manufacturer

Winbond Electronics

Part Number (MPN)

W66CM2NQUAHJ

Technical Specifications

Winbond Electronics W66CM2NQUAHJ DRAM technical specifications.

General

Memory Size

4Gbit

RoHS

ROHS3 Compliant

Package / Case

200-WFBGA

Packaging

Tray

Mounting Type

Surface Mount

Operating Temperature

-40°C ~ 105°C (TC)

Supply Voltage

1.06V ~ 1.17V, 1.7V ~ 1.95V

Lifecycle Status

Active

Max Frequency

2.133 GHz

Memory Type

Volatile

Related Parts Comparison (W66CM2NQUAHJ vs W66AP6NBUAFJ vs W66BQ2NQUAGJ vs W66AQ6NBUAHJ)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

	This Part	Related Part	Related Part	Related Part
	Winbond ElectronicsW66CM2NQUAHJ	Winbond ElectronicsW66AP6NBUAFJ	Winbond ElectronicsW66BQ2NQUAGJ	Winbond ElectronicsW66AQ6NBUAHJ
Package / Case	200-WFBGA	200-WFBGA	200-WFBGA	200-WFBGA
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature	-40°C ~ 105°C (TC)	-40°C ~ 105°C (TC)	-40°C ~ 105°C (TC)	-40°C ~ 105°C (TC)
Supply Voltage	1.06V ~ 1.17V, 1.7V ~ 1.95V	1.06V ~ 1.17V, 1.7V ~ 1.95V	1.06V ~ 1.17V, 1.7V ~ 1.95V	1.06V ~ 1.17V, 1.7V ~ 1.95V
Memory Size	4Gbit	1Gbit	2Gbit	1Gbit
Lifecycle Status	Active	Active	Active	Active
Access Time	3.5 ns	3.6 ns	3.6 ns	3.6 ns
Max Frequency	2.133 GHz	1.6 GHz	1.867 GHz	2.133 GHz
Memory Format	DRAM	DRAM	DRAM	DRAM
Memory Interface	LVSTL_11	LVSTL_11	LVSTL_06	LVSTL_06
Memory Organization	128M x 32	64M x 16	64M x 32	64M x 16
Memory Type	Volatile	Volatile	Volatile	Volatile
Action	RFQ	RFQ	RFQ	RFQ

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