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Winbond Electronics W66BL6NBUAGJ DRAM

DRAM Memory IC 2Gbit LVSTL_11 1.866 GHz 1.06V ~ 1.17V, 1.7V ~ 1.95V 200-WFBGA (10x14.5)

In Stock ActiveWinbond Electronics200-WFBGA (10x14.5)RoHS
W66BL6NBUAGJ 200-WFBGA (10x14.5) package illustration

Same model may have multiple batches, images only for reference.

W66BL6NBUAGJ
Part Number (MPN)
W66BL6NBUAGJ
Detailed Description
IC DRAM 2GBIT LVSTL 11 200WFBGA
Package
200-WFBGA (10x14.5)
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF W66BL6NBUAGJ Datasheet
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Technical Specifications

Winbond Electronics W66BL6NBUAGJ DRAM technical specifications.

General

Memory Size
2Gbit
RoHS
ROHS3 Compliant
Package / Case
200-WFBGA
Packaging
Tray
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 105°C (TC)
Supply Voltage
1.06V ~ 1.17V, 1.7V ~ 1.95V
Lifecycle Status
Active
Max Frequency
1.866 GHz
Memory Type
Volatile

Related Parts Comparison (W66BL6NBUAGJ vs W66AP6NBUAFJ vs W66BQ2NQUAGJ vs W66AQ6NBUAHJ)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / Case200-WFBGA200-WFBGA200-WFBGA200-WFBGA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 105°C (TC)-40°C ~ 105°C (TC)-40°C ~ 105°C (TC)-40°C ~ 105°C (TC)
Supply Voltage1.06V ~ 1.17V, 1.7V ~ 1.95V1.06V ~ 1.17V, 1.7V ~ 1.95V1.06V ~ 1.17V, 1.7V ~ 1.95V1.06V ~ 1.17V, 1.7V ~ 1.95V
Memory Size2Gbit1Gbit2Gbit1Gbit
Lifecycle StatusActiveActiveActiveActive
Access Time3.5 ns3.6 ns3.6 ns3.6 ns
Max Frequency1.866 GHz1.6 GHz1.867 GHz2.133 GHz
Memory FormatDRAMDRAMDRAMDRAM
Memory InterfaceLVSTL_11LVSTL_11LVSTL_06LVSTL_06
Memory Organization128M x 1664M x 1664M x 3264M x 16
Memory TypeVolatileVolatileVolatileVolatile
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