Winbond Electronics W66BL6NBUAFJ DRAM
IC DRAM 2GBIT LVSTL 11 200WFBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
W66BL6NBUAFJ
Detailed Description
IC DRAM 2GBIT LVSTL 11 200WFBGA
Package
200-WFBGA (10x14.5)
Lifecycle Status
NRND
RoHS State
RoHS Compliant
Datasheet
W66BL6NBUAFJ Datasheet
Quick Jump:
Technical Specifications
Winbond Electronics W66BL6NBUAFJ DRAM technical specifications.
General
Memory Size
2Gbit
RoHS
ROHS3 Compliant
Package / Case
200-WFBGA
Packaging
Tray
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 105°C (TC)
Supply Voltage
1.06V ~ 1.17V, 1.7V ~ 1.95V
Lifecycle Status
Not For New Designs
Max Frequency
1.6 GHz
Memory Type
Volatile
Alternate Parts Comparison (W66BL6NBUAFJ vs W66AP6NBUAFJ vs W66BQ2NQUAGJ vs W66AQ6NBUAHJ)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Manufacturer | -- | -- | -- | -- |
| Package / Case | 200-WFBGA | 200-WFBGA | 200-WFBGA | 200-WFBGA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 105°C (TC) | -40°C ~ 105°C (TC) | -40°C ~ 105°C (TC) | -40°C ~ 105°C (TC) |
| Supply Voltage | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Memory Size | 2Gbit | 1Gbit | 2Gbit | 1Gbit |
| Lifecycle Status | Not For New Designs | Active | Active | Active |
| Access Time | 3.5 ns | 3.6 ns | 3.6 ns | 3.6 ns |
| Max Frequency | 1.6 GHz | 1.6 GHz | 1.867 GHz | 2.133 GHz |
| Memory Format | DRAM | DRAM | DRAM | DRAM |
| Memory Interface | LVSTL_11 | LVSTL_11 | LVSTL_06 | LVSTL_06 |
| Memory Organization | 128M x 16 | 64M x 16 | 64M x 32 | 64M x 16 |
| Action |
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