Winbond Electronics W66AP6NBUAFJ DRAM

Name: W66AP6NBUAFJ
Brand: Winbond Electronics
SKU: W66AP6NBUAFJ

DRAM Memory IC 1Gbit LVSTL_11 1.6 GHz 1.06V ~ 1.17V, 1.7V ~ 1.95V 200-WFBGA (10x14.5)

In Stock ActiveWinbond Electronics200-WFBGA (10x14.5)

Same model may have multiple batches, images only for reference.

W66AP6NBUAFJ

Manufacturer

Winbond Electronics

Part Number (MPN)

W66AP6NBUAFJ

Technical Specifications

Winbond Electronics W66AP6NBUAFJ DRAM technical specifications.

General

Memory Size

1Gbit

Maximum Clock Frequency

2.133 GHz

Package / Case

200-WFBGA

Packaging

Tray

Mounting Type

Surface Mount

Operating Temperature

-40°C ~ 105°C (TC)

Supply Voltage

1.06V ~ 1.17V, 1.7V ~ 1.95V

Lifecycle Status

Active

Max Frequency

1.6 GHz

Memory Interface

LVSTL_11

Related Parts Comparison (W66AP6NBUAFJ vs W66BL6NBUAHJ vs W66BL6NBUAGJ vs W66BL6NBUAFJ)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

	This Part	Related Part	Related Part	Related Part
	Winbond ElectronicsW66AP6NBUAFJ	Winbond ElectronicsW66BL6NBUAHJ	Winbond ElectronicsW66BL6NBUAGJ	Winbond ElectronicsW66BL6NBUAFJ
Package / Case	200-WFBGA	200-WFBGA	200-WFBGA	200-WFBGA
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature	-40°C ~ 105°C (TC)	-40°C ~ 105°C (TC)	-40°C ~ 105°C (TC)	-40°C ~ 105°C (TC)
Supply Voltage	1.06V ~ 1.17V, 1.7V ~ 1.95V	1.06V ~ 1.17V, 1.7V ~ 1.95V	1.06V ~ 1.17V, 1.7V ~ 1.95V	1.06V ~ 1.17V, 1.7V ~ 1.95V
Memory Size	1Gbit	2Gbit	2Gbit	2Gbit
Lifecycle Status	Active	Active	Active	Active
Access Time	3.6 ns	3.5 ns	3.5 ns	3.5 ns
Max Frequency	1.6 GHz	2.133 GHz	1.866 GHz	1.6 GHz
Memory Format	DRAM	DRAM	DRAM	DRAM
Memory Interface	LVSTL_11	LVSTL_11	LVSTL_11	LVSTL_11
Memory Organization	64M x 16	128M x 16	128M x 16	128M x 16
Memory Type	Volatile	Volatile	Volatile	Volatile
Action	RFQ	RFQ	RFQ	RFQ

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