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Vishay SISS40DN-T1-GE3 MOSFETs

Power Field-Effect Transistor, 36.5A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

9,000 ActiveVishayPowerPAK-1212-8S-8$2.27
SISS40DN-T1-GE3 PowerPAK-1212-8S-8 package illustration

Same model may have multiple batches, images only for reference.

SISS40DN-T1-GE3
Manufacturer
Part Number (MPN)
SISS40DN-T1-GE3
Detailed Description
Power Field-Effect Transistor, 36.5A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Package
PowerPAK-1212-8S-8
Lifecycle Status
Active
Datasheet
PDF SISS40DN-T1-GE3 Datasheet
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Technical Specifications

Vishay SISS40DN-T1-GE3 MOSFETs technical specifications.

General

RoHS
Yes
Package
PowerPAK-1212-8S-8

Related Parts Comparison (SISS40DN-T1-GE3 vs SISS27ADN-T1-GE3 vs SISS71DN-T1-GE3 vs SISS27DN-T1-GE3)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesCompliant with ExemptionYesYes
PackagePowerPAK-1212-8S-8----PowerPAK-1212-8
Series--SISSThunderFET®SIS
Mounting Type--Surface MountSurface MountSMD/SMT
Number of Channels--1 Channel11 Channel
Technology--SiMOSFET (Metal Oxide)Si
Package / Case--Tape and ReelPowerPAK® 1212-8S--
Operating Temperature---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--
Number of Pins--88--
Lifecycle Status--ActiveActive--
Channel Mode--Enhancement--Enhancement
Configuration--Single Quad Drain Triple Source--Single
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