Vishay SISS27ADN-T1-GE3 MOSFETs
Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK 1212 EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISS27ADN-T1-GE3
Detailed Description
Trans MOSFET P-CH 30V 50A 8-Pin PowerPAK 1212 EP T/R
Package
PowerPAK 1212 EP
Lifecycle Status
Active
Datasheet
SISS27ADN-T1-GE3 Datasheet
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Technical Specifications
Vishay SISS27ADN-T1-GE3 MOSFETs technical specifications.
General
Series
SISS
RoHS
Compliant with Exemption
Number of Pins
8
Number of Channels
1 Channel
Package / Case
Tape and Reel
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Automotive
No
Channel Mode
Enhancement
Alternate Parts Comparison (SISS27ADN-T1-GE3 vs SISS27DN-T1-GE3 vs SISS23DN-T1-GE3 vs SISS42LDN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SISS | SIS | SIS | SIS |
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Compliant with Exemption | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single Quad Drain Triple Source | Single | Single | Single |
| Fall Time | 22 ns | 10 ns | 50 ns | 5 ns |
| Forward Transconductance Min | 57 S | 52 S | 44 S | 70 S |
| Pd Power Dissipation | 57 W | 57 W | 57 W | 57 W |
| Qg Gate Charge | 117 nC | 92 nC | 300 nC | 48 nC |
| Rds on Drain Source Resistance | 4.2 mOhms | 5.6 mOhms | 3.5 mOhms | 14.9 mOhms |
| Rise Time | 35 ns | 5 ns | 50 ns | 5 ns |
| Action |
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