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Vishay SISS67DN-T1-GE3 MOSFETs

Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK 1212-S EP T/R

35 ActiveVishayPowerPAK-1212-8S-8$3.27
SISS67DN-T1-GE3 PowerPAK-1212-8S-8 package illustration

Same model may have multiple batches, images only for reference.

SISS67DN-T1-GE3
Manufacturer
Part Number (MPN)
SISS67DN-T1-GE3
Detailed Description
Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK 1212-S EP T/R
Package
PowerPAK-1212-8S-8
Lifecycle Status
Active
Datasheet
PDF SISS67DN-T1-GE3 Datasheet
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Technical Specifications

Vishay SISS67DN-T1-GE3 MOSFETs technical specifications.

General

Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
60 A
Rds on Drain Source Resistance
4.6 mOhms

Alternate Parts Comparison (SISS67DN-T1-GE3 vs SISS40DN-T1-GE3 vs SISS71DN-T1-GE3 vs SISS27ADN-T1-GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesCompliant with Exemption
SeriesSIS--ThunderFET®SISS
Mounting TypeSMD/SMT--Surface MountSurface Mount
Operating Temperature- 55°C ~ + 150°C---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Number of Channels1 Channel--11 Channel
TechnologySi--MOSFET (Metal Oxide)Si
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