Vishay SISS67DN-T1-GE3 MOSFETs
Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK 1212-S EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISS67DN-T1-GE3
Detailed Description
Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK 1212-S EP T/R
Package
PowerPAK-1212-8S-8
Lifecycle Status
Active
Datasheet
SISS67DN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SISS67DN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
60 A
Rds on Drain Source Resistance
4.6 mOhms
Related Parts Comparison (SISS67DN-T1-GE3 vs SISS40DN-T1-GE3 vs SISS71DN-T1-GE3 vs SISS27ADN-T1-GE3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Compliant with Exemption |
| Series | SIS | -- | ThunderFET® | SISS |
| Mounting Type | SMD/SMT | -- | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Channels | 1 Channel | -- | 1 | 1 Channel |
| Technology | Si | -- | MOSFET (Metal Oxide) | Si |
| Action |
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