Vishay SISS27DN-T1-GE3 MOSFETs
P-CH MOSFET 30V 50A 5.6mR PPAK 1212-8S
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISS27DN-T1-GE3
Detailed Description
P-CH MOSFET 30V 50A 5.6mR PPAK 1212-8S
Package
PowerPAK-1212-8
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Vishay SISS27DN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
50 A
Rds on Drain Source Resistance
5.6 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SISS27DN-T1-GE3 vs SISS10DN-T1-GE3 vs SI7114DN-T1-GE3 vs SI7106DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Series | SIS | SIS | -- | -- |
| Mounting Type | SMD/SMT | SMD/SMT | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Single | Single | -- | -- |
| Fall Time | 10 ns | 7 ns | -- | -- |
| ID Continuous Drain Current | 50 A | 60 A | -- | -- |
| Pd Power Dissipation | 57 W | 57 W | -- | -- |
| Qg Gate Charge | 92 nC | 75 nC | -- | -- |
| Rds on Drain Source Resistance | 5.6 mOhms | 2.65 mOhms | -- | -- |
| Action |
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