Vishay SISS32DN-T1-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISS32DN-T1-GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK® 1212-8S (3.3x3.3)
Lifecycle Status
Active
Datasheet
SISS32DN-T1-GE3 Datasheet
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Technical Specifications
Vishay SISS32DN-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET® Gen IV
RoHS
Yes
Package / Case
PowerPAK® 1212-8S
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
17.4A (Ta), 63A (Tc)
Drain to Source Voltage Vdss
80 V
Drive Voltage Max Rds on Min Rds on
7.5V, 10V
Fet Type
N-Channel
Related Parts Comparison (SISS32DN-T1-GE3 vs SISS63DN-T1-GE3 vs SISS27DN-T1-GE3 vs SISS23DN-T1-GE3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Technology | MOSFET (Metal Oxide) | Si | Si | Si |
| Series | TrenchFET® Gen IV | -- | SIS | SIS |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 25 ns, 70 ns | 10 ns | 50 ns |
| Forward Transconductance Min | -- | 75 S | 52 S | 44 S |
| ID Continuous Drain Current | -- | 127.5 A | 50 A | 50 A |
| Maximum Operating Temperature C | -- | + 150 | + 150 | + 150 |
| Minimum Operating Temperature C | -- | - 55 | - 55 | - 55 |
| Action |
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